中英
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reactive sputtering中文是什么意思
- 中文翻譯
- 造句
- 反應(yīng)濺射法
- 往復(fù)濺射
- reactive adj. 1.反動的，倒退的，復(fù)古的。 2.反應(yīng)的；反作 ...
- sputter vi.,vt. 1.飛濺唾沫；(食渣等)飛濺。 2.唾沫 ...
- reactive sputtering source 反應(yīng)濺射源
- reactive sputtering system 反應(yīng)性濺鍍系統(tǒng)
- sputtering 飛濺; 濺鍍金屬; 濺射; 噴濺涂覆法; 噴涂
- reactive adj. 1.反動的，倒退的，復(fù)古的。 2.反應(yīng)的；反作用的；反沖的；【電學(xué)】電抗的；【化學(xué)】反應(yīng)性的，活性的。 a reactive current 無效電流。 reactive power 無功電力。 reactivity n. adv. -ly ,-ness n.
- anode sputtering 陽極濺射
- bias sputtering 偏壓濺射; 偏置濺射
- biasing sputtering 偏壓濺射
- bulk sputtering 容積濺射
- catbode sputtering 陰極濺射
- cathod sputtering 陰極濺射
- cathode sputtering 等離子陰極濺射; 陰極爆蝕; 陰極濺射
- cathodic sputtering 陰極濺散; 陰極濺射
- catholic sputtering 陰極濺射法
- catodic sputtering 陰極濺射
- co-sputtering 共濺射
- collimate sputtering 準直濺鍍
- cool sputtering 冷濺射
- diode sputtering 二極管濺射; 二極濺射
- evaporation and sputtering 熱蒸鍍及濺鍍
- getter sputtering 吸氣噴鍍
- inspiration sputtering 吸氣濺射
- ion sputtering 離子濺鍍; 離子濺射
- ionization by sputtering 濺射電離
- Reactive sputter etching system
反應(yīng)性濺鍍蝕刻系統(tǒng) - Reactive sputtering system
反應(yīng)性濺鍍系統(tǒng) - Reactive sputtering source
反應(yīng)濺射源 - Hysteresis in aluminum oxides films growth with pulsed reactive sputtering
鋁靶脈沖反應(yīng)濺射沉積氧化鋁薄膜中的遲滯回線的研究 - The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method
利用射頻磁控反應(yīng)濺射法，在藍寶石試片和半球形頭罩上制備出所設(shè)計的sio _ 2和sio _ 2 si增透膜系。 - Through the technology of rf and dc reactive sputtering manufacture , h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached
通過交流和直流反應(yīng)濺射，我們以硅基片(表面上有白金加熱電極)為基底制作h _ 2s氣敏元件。 - The thesis main parts are as followings : ( 1 ) the mechanical properties of the cnx thin film on the various substrate materials by dc magnetron reactive sputtering . ( 2 ) the study of the cnx film structure by x - ray diffraction
文章主要部分介紹、論述、總結(jié)了我在做畢業(yè)論文期間進行的五方面工作： ( 1 )用直流磁控反應(yīng)濺射方法在各種材料襯底上沉積cnx超硬薄膜，研究在不同襯底對薄膜的力學(xué)性質(zhì)的影響。 - It was found that the decompose efficiency to solution associated with the number of films layer ; calcine temperature and ph value . some analyses have been performed . tio _ 2 films were also synthesized by reactive sputtering and chemical vapor deposition
通過溶膠凝膠法制備了tio _ 2薄膜對其進行光催化反應(yīng)實驗，發(fā)現(xiàn)膜層厚度、薄膜煅燒溫度和溶液ph值對降解效率都有直接的影響，并對結(jié)果進行分析。 - We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在優(yōu)化工藝條件下制備的hfo _ 2介質(zhì)層中，襯底注入條件下由于其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發(fā)射為主; silc效應(yīng)導(dǎo)致hfoz / si界面缺陷態(tài)的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發(fā)射還有f一p發(fā)射機制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )柵介質(zhì)的電學(xué)特征。 - The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
柵泄漏電流的減小可歸于氧空位缺陷的減小，即高的濺射氧氣氛和氧氣氛退火有助于減小hfo _ 2柵介質(zhì)中的氧空位缺陷； 4 )研究了反應(yīng)濺射制備的hfo _ 2柵介質(zhì)漏電流機制及其silc效應(yīng)。
- 更多例句： 1 2
- reactive sputteringとは意味：反応性｛はんのうせい｝スパッタリング
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